Substrate for display device and method of fabricating the same

ABSTRACT

A method for a display device is discussed. The method according to one embodiment includes forming a substrate of the display device; forming a thin film transistor on the substrate; and forming a passivation layer of a photosensitive organic material on the thin film transistor, the passivation layer having a contact hole exposing the thin film transistor. The photosensitive organic material comprises an ultraviolet absorber. The method according to the embodiment includes forming a blocking area in a mask above the contact hole; and absorbing, via the ultraviolet absorber, reflected ultraviolet (UV) rays passing by the blocking area in the mask above the contact hole.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a Divisional of co-pending U.S. applicationSer. No. 13/939,021 filed on Jul. 10, 2013, which claims the prioritybenefit of Korean Patent Application No. 10-2012-0136134 filed in theRepublic of Korea on Nov. 28, 2012, the entire contents of all of theabove applications are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Disclosure

The present disclosure relates to a substrate for a display device, andmore particularly, to a substrate including a photosensitive organicinsulating layer and a method of fabricating the substrate.

2. Discussion of the Related Art

In general, a liquid crystal display (LCD) device may be driven based onoptical anisotropy and polarization of liquid crystals (LCs). Since LCmolecules are thin and long, the LC molecules may be arranged in aspecific direction, and the direction in which the LC molecules arearranged may be controlled by artificially applying an electric field tothe LCs.

That is, when the arrangement of the LC molecules is changed using theelectric field, light may be refracted due to the optical anisotropy ofthe LCs in the direction in which the LC molecules are arranged, so thatimages can be displayed.

In recent years, an active-matrix LCD (AM-LCD) device in which TFTs andpixel electrodes are arranged in matrix shapes has attracted muchattention because the device has a high resolution and is highly capableof embodying moving images.

The LCD device includes an array substrate having a pixel electrode, acolor filter substrate having a common electrode and a liquid crystallayer interposed between the array substrate and the color filtersubstrate. The array substrate includes a plurality of pixel regions anda thin film transistor (TFT) is formed in each pixel region. The pixelelectrode is connected to the TFT through a contact hole of aninsulating layer.

The contact hole may be formed through a photolithographic processincluding a step of coating a photoresist (PR), a step of forming a PRpattern by exposure and development, and a step of etching an insulatinglayer using the PR pattern as an etching mask.

A process where a step of coating the PR and a step of etching theinsulating layer are omitted by forming the insulating layer between theTFT and the pixel electrode using a photosensitive organic material suchas a photo acryl has been researched.

The photosensitive organic material including the PR and the photo acrylmay be classified into a positive type and a negative type according toa dissolution property in a developer after exposure. A solubility of anexposed portion of a positive type photosensitive organic materialincreases so that the exposed portion can be removed after development,while a solubility of an exposed portion of a negative typephotosensitive organic material decreases so that an unexposed portioncan be removed after development.

The photosensitive organic material is exposed to an ultraviolet (UV)ray emitted from a mercury (Hg) lamp. For example, the photosensitiveorganic material may be cured by the i-line UV ray of an having awavelength of about 365 nm. When a pattern of a photo mask has arelatively large size (critical dimension: CD), an influence ofdiffraction is relatively small so that an influence of a diffractedlight can be minimized. However, when a pattern of a photo mask has arelatively small size, a shape of a pattern of the photosensitiveorganic material may be distorted by the diffracted light.

Specifically, a size of a contact hole in an insulating layer is reducedto improve aperture ratio and brightness of a display device.Deterioration of a fine contact hole due to the diffracted light becomesa serious problem.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to a display device thatsubstantially obviates one or more of the problems due to thelimitations and disadvantages of the related art.

An object of the present disclosure is to provide a substrate for adisplay device where aperture ratio and brightness are improved byforming a fine contact hole in an insulating layer of a photosensitiveorganic material including a LW absorber and a method of fabricating thesubstrate.

Additional features and advantages of the invention will be set forth inthe description which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention. Theobjectives and other advantages of the invention will be realized andattained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof the present invention, as embodied and broadly described herein,there is provided a substrate for a display device including: a basesubstrate; a thin film transistor on the base substrate; a passivationlayer of a photosensitive organic material on the thin film transistor,the passivation layer having a contact hole exposing the thin filmtransistor, the photosensitive organic material including an ultravioletabsorber; and a pixel electrode on the passivation layer, the pixelelectrode connected to the thin film transistor through the contacthole.

In another aspect, there is provided a method of fabricating a substratefor a display device including: forming a thin film transistor on asubstrate; forming a passivation layer on the thin film transistor usinga photosensitive organic material including an ultraviolet absorber, thepassivation layer having a contact hole exposing the thin filmtransistor; and firming a pixel electrode on the passivation layer, thepixel electrode connected to the thin film transistor through thecontact hole.

It is to be understood that both the foregoing general description andthe following detailed description are explanatory and are intended toprovide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention. In the drawings:

FIG. 1 is a view showing an example of a photo mask and a contact holeof an insulating layer for identifying a residue part in the contacthole according to an embodiment of the present invention;

FIG. 2 is a view showing an example of a spectrum of light emitted froma mercury lamp for identifying UV rays causing the residual part in thecontact according to an embodiment of the present invention;

FIG. 3 is a view showing an example of a substrate for a display deviceaccording to an embodiment of the present invention;

FIG. 4 is a view showing an example of a method of fabricating asubstrate for a display device according to an embodiment of the presentinvention;

FIG. 5 is a view showing an example of an exposure property of apassivation layer on a substrate for a display device according to anembodiment of the present invention; and

FIG. 6 is a view showing an example of a passivation layer over asubstrate for a display device according to an embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

Reference will now be made in detail to the preferred embodiments,examples of which are illustrated in the accompanying drawings.

FIG. 1 is a view showing an example of a photo mask and a contact holeof an insulating layer for identifying a residue part according to anembodiment of the present invention.

In FIG. 1, an insulating layer 20 of a photosensitive organic materialis formed on a substrate 10, and a fine contact hole 22 is formed in theinsulating layer 20 by irradiating a UV ray onto the insulating layer 20through a photo mask 30 and developing the exposed insulating layer 20.The photosensitive organic material may have, for example, a negativetype. In addition, a blocking area 32 of the photo mask 30 maycorrespond to the contact hole 22 and a transmissive area 34 of thephoto mask 30 may correspond to the other portion of the insulatinglayer 20 not including the contact hole 22.

The unexposed photosensitive organic material corresponding to theblocking area 32 of the photo mask 30 is removed by development tobecome the contact hole 22, and the photosensitive organic materialexposed to a transmitted light 42 through the transmissive area 34 ofthe photo mask 30 remains as the insulating layer 20 after thedevelopment. Since a diffracted light 44 through the transmissive area34 of the photo mask 30 is irradiated onto the photosensitive organicmaterial corresponding to a center portion of the blocking area 32 ofthe photo mask 30, the photosensitive organic material exposed to thediffracted light 44 remains as a residual part 24 in the contact hole22. However, the creation of the residual part 24 interrupts an electricconnection through the contact hole 22 causing deterioration of thedisplay quality of the display device.

FIG. 2 is a view showing an example of a spectrum of light emitted froma mercury lamp for identifying UV rays according to an embodiment of thepresent invention.

In FIG. 2, light emitted from the mercury lamp includes h-line UV rayshaving a wavelength of about 405 nm, g-line UV rays having a wavelengthof about 436 nm, as well as i-line UV rays having a wavelength of about365 mm. In accordance with the law of diffraction, as the wavelength oflight increases, a distance or an angle to the first bright point of adiffraction pattern increases. As a result, the h-line UV rays havingthe wavelength of about 405 nm and the g-line UV rays having thewavelength of about 436 nm rather than the i-line UV rays having thewavelength of about 365 mm may impact the center portion of the contacthole 22 (refer to FIG. 1) causing the generation of the residual part 24(refer to FIG. 1).

In further detail, by analyzing the spectrum of light emitted from themercury lamp and the generation of the residual part in the contact holeresulting from the light emitted from the mercury lamp, according to thepresent invention, it can be seen that the residual part is caused by UVrays represented in the spectrum of light. In particular, according tothe present invention, the cause of the generation of the residual partcan be identified as UV rays emitted from the mercury lamp havingwavelengths other than of about 365 nm. In other words, according to thepresent invention, analyzing UV rays emitted from the mercury lampreveals that, although the photosensitive organic insulating material isfabricated with i-line UV rays emitted from the mercury lamp havingwavelengths of about 365 nm, the light emitted from the mercury lampalso includes g-line and h-line UV rays having longer wavelengths whichcause the generation of the residual part.

FIG. 3 is a view showing an example of a substrate for a display deviceaccording to an embodiment of the present invention.

In FIG. 3, a thin film transistor (TFT) T and a pixel electrode 140 areformed over a substrate 110 for a display device according to anembodiment of the present invention. A gate electrode 120 is formed onthe substrate 110, and a gate insulating layer 122 is formed on the gateelectrode 120. A semiconductor layer 123 is formed on the gateinsulating layer 122 over the gate electrode 120, and source and drainelectrodes 124 and 126 facing and spaced apart from each other areformed on the semiconductor layer 123. The gate electrode 120, thesemiconductor layer 123, the source electrode 124, and the drainelectrode 126, for example, constitutes the TFT T.

A passivation layer 130 is formed on the TFT T. The passivation layer130 has a contact hole 132 exposing the drain electrode 126. A pixelelectrode 140 is formed on the passivation layer 130. The pixelelectrode 140 is connected to the drain electrode 126 of the TFT throughthe contact hole 132. A gate line and a data line crossing each other todefine a pixel region are formed over the substrate 110, and the gateelectrode 120 and the source electrode 124 of the TFT T are connected tothe gate line and the data line, respectively. Accordingly, when a gatesignal is applied to the gate electrode 120 through the gate line, theTFT T is turned on and a data signal supplied to the source electrode124 through the data line is applied to the pixel electrode 140 throughthe drain electrode 126.

The passivation layer 130 is formed of a photosensitive organicmaterial, and the photosensitive organic material includes a ultraviolet(UV) absorber and a radical scavenger. A method of forming thepassivation layer 130 using the photosensitive organic material isillustrated hereinafter.

FIG. 4 is a view showing an example of a method of fabricating asubstrate for a display device according to an embodiment of the presentinvention.

In FIG. 4, after an insulating layer is formed by coating aphotosensitive organic material on a substrate 110, the substrate 110having the insulating layer is inputted into an exposure apparatus. Thephotosensitive organic material may have a negative type and theexposure may have a projection type or a proximity type.

In the exposure apparatus, a photo mask 150 having a blocking area 152and a transmissive area 154 is aligned and disposed over the insulatinglayer, and UV rays emitted from a light source over the photo mask 150is irradiated onto the insulating layer through the photo mask 150.

The exposed insulating layer output from the exposure apparatus isdeveloped and the insulating layer corresponding to the blocking area152 of the photo mask 150 is removed to form a passivation layer 130having a contact hole 132. After development, an unexposed portion ofthe photosensitive organic material corresponding to the blocking area152 of the photo mask 150 is removed to become the contact hole 132, andan exposed portion of the photosensitive organic material to atransmitted light 162 through the transmissive area 154 of the photomask 150 remains to become the passivation layer 130. As a result, theblocking area 152 of the photo mask 150 corresponds to the contact hole132 of the passivation layer 130 and the transmissive area 154 of thephoto mask 150 corresponds to the other portion of the passivation layer130 not including the contact hole 132.

For the purpose of preventing the residual part of the photosensitivematerial at the center portion of the contact hole 132 by a diffractedlight 164 through the transmissive area 154 of the photo mask 150, thephotosensitive organic material includes a UV absorber 134 and a radicalscavenger 136.

For example, the photosensitive organic material may be fabricated byadding the UV absorber 134 and the radical scavenger 136 to aphotoinitiator, a crosslinker, and a binder. The photoinitiator mayabsorb the UV rays to generate a free radical, and the crosslinker maycombine the free radical generated from the photoinitiator with thebinder.

The UV absorber 134 may absorb h-line UV rays having the wavelength ofabout 405 nm, the g-line UV rays having the wavelength of about 436 nm,as well as the i-line UV rays having the wavelength of about 365 mm. Forexample, the UV absorber 134 may have an extinction coefficient of about214.3×10⁵ to about 551.5×10⁵ for the i-line UV rays having thewavelength of about 365 mm. In addition, the UV absorber 134 may have anextinction coefficient of about 28.9×10⁵ to about 59.3×10⁵ for theh-line U V rays having the wavelength of about 405 nm, and may have anextinction coefficient of about 3.53×10⁵ to about 8.85×10⁵ for theg-line UV rays having the wavelength of about 436 nm.

The radical scavenger 136 may remove the free radical generated from thephotoinitiator due to UV irradiation and may stop generation of the freeradical. The radical scavenger 136 may be referred to as a hinderedamine light stabilizer (HALS).

The UV absorber 134 prevents irradiation of the diffracted light 164onto the photosensitive material at the center portion of the contacthole 132 by absorbing the UV rays, and the radical scavenger 136prevents combination of the free radical with the binder by removing thefree radical generated from the photoinitiator due to the diffractedlight 164. Accordingly, the residual photosensitive organic material atthe center portion of the contact hole 132 due to the diffracted light164 is prevented.

Although both the UV absorber 134 and the radical scavenger 136 areadded to the photosensitive organic material in FIG. 4, the radicalscavenger 136 may be omitted and the UV absorber 134 may be added to thephotosensitive organic material in another embodiment.

A reactivity of the crosslinker is adjusted to have a relatively highercritical exposure energy density where the photosensitive organicmaterial starts remaining. The reactivity of the crosslinker will beillustrated hereinafter.

FIG. 5 is a view showing an example of an exposure property of apassivation layer on a substrate for a display device according to anembodiment of the present invention.

In FIG. 5, an example of the passivation layer 130 (refer to FIG. 4) isshown including a residual film ratio with respect to an exposure energydensity according to a first curve C1, wherein the first curve C1corresponds to a first critical exposure energy density Ec1.Accordingly, the exposed photosensitive organic material is removedafter development even when the diffracted light 164 (refer to FIG. 4)having an exposure energy density smaller than the first criticalexposure energy density Ec1 is irradiated onto the photosensitiveorganic material.

For example, the first critical exposure energy density Ec1 may bedetermined to be smaller than about 90% of the minimum exposure energydensity among various exposure energy densities for display deviceshaving various models or various specifications. The first criticalexposure energy density may be about 15 mJ/cm².

The residual film ratio with respect to the exposure energy density andthe critical exposure energy density may be adjusted by an acid value ofa multifunctional monomer used as the crosslinker.

For example, when the photosensitive organic material has a propertyaccording to a second curve C2, the photosensitive organic material mayremain at the center portion of the contact hole 132 (refer to FIG. 4)due to the diffracted light 164 having an exposure energy densitysmaller than the first critical exposure energy density Ec1 and greaterthan the second critical exposure energy density Ec2. In addition, whenthe photosensitive organic material has a property according to a thirdcurve C1, the photosensitive organic material may remain at the centerportion of the contact hole 132 due to the diffracted light 164 having arelatively small exposure energy density.

A contact hole formed by using a photosensitive organic material isillustrated hereinafter.

FIG. 6 is a view showing an example of a passivation layer over asubstrate for a display device according to an embodiment of the presentinvention.

In FIG. 6, a gate insulating layer 122, a drain electrode 126 and apassivation layer 130 are sequentially formed on a substrate 110 asshown, and the passivation layer 130 includes a contact hole 132exposing the drain electrode 126.

Uppermost and lowermost portions of the contact hole may have first andsecond widths d1 and d2, respectively, where no photosensitive organicmaterial remains at a center portion of the contact hole 132. Forexample, the first and second widths may be about 6.57 μm and 3.14 μm,respectively. Accordingly, the electric characteristics of the pixelelectrode 140 (refer to FIG. 3) and the drain electrode 126 through thecontact hole 132 are improved and the display quality of the displaydevice is improved.

Although a photosensitive organic material of a negative type is usedfor the substrate for the display device as shown in the embodiments inFIGS. 3-6, the photosensitive organic material of the positive type maybe applied to the substrate for the display device in anotherembodiment.

In addition, the photosensitive organic material may be applied to thesubstrate for the display device, wherein the display device includes,for example, a fiat panel display (FPD) such as a liquid crystal display(LCD) device, an organic light emitting diode (OLED) display device, ora plasma display panel (PDP).

Consequently, in the substrate for the display device and the method offabricating the same according to embodiments of the present invention,the aperture ratio and brightness of the display device may be improvedsince the passivation layer having a fine contact hole is formed using aphotosensitive organic material including a UV absorber and a radicalscavenger; and a critical exposure energy density of the photosensitiveorganic material is adjusted.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in a substrate for a displaydevice of the present disclosure without departing from the sprit orscope of the invention. Thus, it is intended that the present inventioncovers the modifications and variations of this invention provided theycome within the scope of the appended claims and their equivalents.

What is claimed is:
 1. A method for a display device, the methodcomprising: forming a substrate of the display device; forming a thinfilm transistor on the substrate; forming a passivation layer of aphotosensitive organic material on the thin film transistor, thepassivation layer having a contact hole exposing the thin filmtransistor, wherein the photosensitive organic material comprises anultraviolet absorber; forming a blocking area in a mask above thecontact hole; and absorbing, via the ultraviolet absorber, reflectedultraviolet (UV) rays passing by the blocking area in the mask above thecontact hole.
 2. The method according to claim 1, further comprising:absorbing, via the ultraviolet absorber, g-line and h-line UV raysreflected from an edge of the blocking area, the reflected g-line andh-line UV rays having wavelengths of about 436 nm and 405 nm,respectively.
 3. The method according to claim 1, further comprising:absorbing, via the ultraviolet absorber, reflected g-line and h-line UVrays.
 4. The method according to claim 1, wherein the photosensitiveorganic material further comprises: a photoinitiator which generates afree radical when the UV rays are irradiated; a crosslinker which linksthe free radical; and a binder which binds the free radical.
 5. Themethod according to claim 4, wherein the photosensitive organic materialfurther comprises a radical scavenger for removing the free radical. 6.The method according to claim 5, wherein the crosslinker comprises amultifunctional monomer, and wherein a critical exposure energy densityof the photosensitive organic material is adjusted by an acid value ofthe multifunctional monomer.
 7. The method according to claim 1, whereinthe blocking area over the passivation area has a width that is the sameas a width of the contact hole.
 8. A method for a display device,comprising: forming a substrate; forming a thin film transistor on thesubstrate; forming a passivation layer of a photosensitive organicmaterial on the thin film transistor, the passivation layer having acontact hole exposing the thin film transistor, wherein thephotosensitive organic material comprises an ultraviolet absorber; andabsorbing, via the ultraviolet absorber, reflected ultraviolet (UV) rayshaving a wavelength longer than i-line UV rays.
 9. The method accordingto claim 8, further comprising: absorbing, via the ultraviolet absorber,g-line and h-line UV rays reflected from an edge of the blocking area,the reflected g-line and h-line UV rays having wavelengths of about 436nm and 405 nm, respectively.
 10. The method according to claim 8,further comprising: absorbing, via the ultraviolet absorber, reflectedg-line and h-line UV rays.